Tables of Contents service for
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

• Raman scattering from fractal structure of LiF nanocluster-assembled films
  Wang, G., Liu, F. and Cheng, G.
  page 507-512
• Xe post-irradiation effects in the thermal evolution and diffusion of Er-implanted LiNbO₃
  Ramos, S.M.M., Canut, B., Thevenard, P. and Poker, D.B.
  page 513-520
• Magnetic properties of the ternary phosphide U₃Ni_3.34P₆
  Reehuis, M., Sonntag, R., Stusser, N., Ebel, T. and Jeitschko, W.
  page 521-525
• A Raman study of single crystal and thin film tetragonal WSi₂
  Chaix-Pluchery, O., Chenevier, B., Madar, R., Abello, L. and Lucazeau, G.
  page 527-537
• Time series behaviour in ac conductivity of neodymium nitrate crystal with metastable phenomena
  Kawashima, R., Fukase, T. and Isoda, H.
  page 539-545
• Molecular dynamics simulation of sodium ions in one-dimensional tunnel structure of hollandite-type
  Michiue, Y. and Watanabe, M.
  page 547-551
• Thermal and infrared spectroscopic studies of binary MO₃-P₂O₅ and ternary Na₂O-MO₃-P₂O₅ (M = Mo or W) glasses
  Rao, K.J. and Muthupari, S.
  page 553-561
• Chemical vapor deposition precursor chemistry. 5. The photolytic laser deposition of aluminum thin films by chemical vapor deposition
  Spencer, J.T., Glass, J.A. Jr., Hwang, S.-D., Datta, S. and Robertson, B.
  page 563-570
• Polarized electronic spectra of the (CH₃NH₃)₂Cd_1-xMn_xCl₄ (x = 0.1) perovskite layer doped with Cu²⁺: Study of the Cl^-Cu²⁺ charge transfer intensity enhancement along the series
  Valiente, R. and Rodriguez, F.
  page 571-587
• Thermoelectric power of doped cerium oxide
  Ahlgren, E.O. and Poulsen, F.W.
  page 589-599
• Growth of island films from binary melts or a vapor phase at the Ostwald ripening stage under non-isothermal conditions
  Kukushkin, S.A. and Slyozov, V.V.
  page 601-614
• Preparation and characterization of mixed oxides obtained from various molar mixtures of -PbO₂ and TiO₂
  Krishna, K.M., Sharon, M. and Mishra, M.K.
  page 615-626
• Computations of properties of twin planes in silver halide
  Baetzold, R.C.
  page 627-634
• Xanes studies on rhenium L absorption edges of Re₂O₇ graphite intercalation compounds and of other rhenium-oxygen compounds
  Froba, M., Lochte, K. and Metz, W.
  page 635-641
• Localization effect on the frequency of impurity local modes in a semiconductor
  Wei, L., Lan, X.W. and Chu, S.X.
  page 643-645
• Electronic band structure of the magnetic layered semiconductors MPS₃ (M = Mn, Fe and Ni)
  Zhukov, V., Alvarez, S. and Novikov, D.
  page 647-652
• Technical note on the electron-phonon interaction in high purity semiconductors at low lattice temperatures
  Chakrabarti, N. and Bhattacharya, D.P.
  page 653-654